Транзистор S412 SiS412DN SAGA-W27C N-Channel 30 V (D-S) MOSFET 12A Pulsed drain current 30A

Type Designator: SiS412DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 15.6 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 12 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 8 nC
   Rise Time (tr): 12 nS
   Drain-Source Capacitance (Cd): 95 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
   Package: POWERPAK-1212-8